PART |
Description |
Maker |
2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
2SK3114 2SK3114-AZ |
Switching power MOSFET SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的(大功率开关,马达控制应用
|
TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
RJK0364DPA RJK0364DPA-00-J0 |
35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0366DPA RJK0366DPA-00-J0 |
25 A, 30 V, 0.0168 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
HAT2068R-EL-E HAT2068R-15 |
14 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon N Channel Power MOS FET Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|